The drastic changes in the electrical properties of doped hydrogenated amorphous silicon as a resistive layer material during vacuum packaging processes in field emission display
- Issue Date
- 2001-08-12
- Language
- ENG
- Citation
Proceedings of the 14th International Vacuum Microelectronics Conference, pp.217 - 218
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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