DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ha J.K. | - |
dc.contributor.author | Chung B.H. | - |
dc.contributor.author | Han S.Y. | - |
dc.contributor.author | Choi J.O. | - |
dc.contributor.author | Kim, Ho Gi | - |
dc.date.accessioned | 2013-03-16T07:23:24Z | - |
dc.date.available | 2013-03-16T07:23:24Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-08-12 | - |
dc.identifier.citation | Proceedings of the 14th International Vacuum Microelectronics Conference, v., no., pp.217 - 218 | - |
dc.identifier.uri | http://hdl.handle.net/10203/128821 | - |
dc.language | ENG | - |
dc.title | The drastic changes in the electrical properties of doped hydrogenated amorphous silicon as a resistive layer material during vacuum packaging processes in field emission display | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-0035784541 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 217 | - |
dc.citation.endingpage | 218 | - |
dc.citation.publicationname | Proceedings of the 14th International Vacuum Microelectronics Conference | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | Ha J.K. | - |
dc.contributor.nonIdAuthor | Chung B.H. | - |
dc.contributor.nonIdAuthor | Han S.Y. | - |
dc.contributor.nonIdAuthor | Choi J.O. | - |
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