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Showing results 10 to 13 of 13

10
The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors

Liu, Mingyuan; Qin, Fei; Rothschild, Molly; Zhang, Yuxuan; Lee, Dong Hun; No, Kwangsoo; Song, Han Wook; et al, JOURNAL OF ELECTRONIC MATERIALS, v.51, no.4, pp.1813 - 1819, 2022-04

11
The effect of growth temperature on physical properties of heavily doped ZnO:Al films

Hong, Jongin; Paik, Hanjong; Hwang, Hosung; Lee, Sunghwan; deMello, Andrew J.; No, Kwangsoo, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.206, no.4, pp.697 - 703, 2009-04

12
The role of third cation doping on phase stability, carrier transport and carrier suppression in amorphous oxide semiconductors

Reed, Austin; Stone, Chandon; Roh, Kwangdong; Song, Han Wook; Wang, Xingyu; Liu, Mingyuan; Ko, Dong-Kyun; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.8, no.39, pp.13798 - 13810, 2020-10

13
Work function investigations of Al-doped ZnO for band-alignment in electronic and optoelectronic applications

Drewelow, Grant; Reed, Austin; Stone, Chandon; Roh, Kwangdong; Jiang, Zhong-Tao; Linh Nguyen Thi Truc; No, Kwangsoo; et al, APPLIED SURFACE SCIENCE, v.484, pp.990 - 998, 2019-08

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