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Showing results 32 to 46 of 46

32
Polarization properties of vertical-cavity surface-emitting lasers with various patterns in tilted pillar structures

Park, MS; Ahn, Byung Tae; Chu, HY; Yoo, BS; Park, HH, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.12A, pp.6295 - 6300, 1998-12

33
Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In(0.2)Ga(0.8)As and deposition of ultrathin Al(2)O(3) gate insulators

Shin, Byungha; Choi, Donghun; Harris, James S.; Mclntyre, Paul C., APPLIED PHYSICS LETTERS, v.93, no.5, 2008-08

34
Reaction mechanism of low-temperature Cu dry etching using an inductively coupled Cl-2/N-2 plasma with ultraviolet light irradiation

Kwon, MS; Lee, JeongYong, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.8, pp.3119 - 3123, 1999-08

35
Relationship between Cu2ZnSnS4 quasi donor-acceptor pair density and solar cell efficiency

Gershon, Talia; Shin, Byungha; Gokmen, Tayfun; Lu, Siyuan; Bojarczuk, Nestor; Guha, Supratik, APPLIED PHYSICS LETTERS, v.103, no.19, 2013-11

36
Role of insertion layer controlling wavelength in InGaAs quantum dots

Park, SK; Park, YJ; Kim, EK; Park, CJ; Cho, HY; Lim, YS; Lee, JeongYong; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, pp.4378 - 4381, 2002-06

37
Shapes of InAs quantum dots on InGaAs/InP

Hwang, H; Yoon, S; Kwon, H; Yoon, E; Kim, HS; Lee, JeongYong; Cho, B, APPLIED PHYSICS LETTERS, v.85, pp.6383 - 6385, 2004-12

38
Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces

Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.9, pp.5657 - 5660, 2002-05

39
Strain effect and atomic arrangement studies in ZnTe/GaAs lattice-mismatched heterostructures

Lee, HS; Choi, JH; Lee, JeongYong; Lee, JH; Lee, DU; Kim, TW; Park, HL, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.1017 - 1020, 2000-12

40
Strain effects and atomic arrangements of 60 degrees and 90 degrees dislocations near the ZnTe/GaAs heterointerface

Kim, TW; Lee, DU; Lee, HS; Lee, JeongYong; Park, HL, APPLIED PHYSICS LETTERS, v.78, no.10, pp.1409 - 1411, 2001-03

41
STRUCTURAL AND ELECTRICAL-PROPERTIES OF A STRAINED INSB/GAAS HETEROSTRUCTURE

KIM, TW; YOO, BS; MCKEE, MA; Lee, JeongYong, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.142, no.1, pp.23 - 27, 1994-03

42
STRUCTURAL AND OPTICAL-PROPERTIES OF A STRAINED CDTE/GAAS HETEROSTRUCTURE GROWN BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION AT LOW-TEMPERATURE

KIM, TW; PARK, HL; Lee, JeongYong, THIN SOLID FILMS, v.259, no.2, pp.253 - 258, 1995-04

43
STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF SI DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

KIM, TW; KIM, Y; MIN, SK; Lee, JeongYong; LEE, SJ, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.9, no.10, pp.1823 - 1826, 1994-10

44
Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

Park, SJ; Ro, JR; Ha, JS; Kim, SB; Park, HyoHoon; Lee, EH; Yi, JY; et al, SURFACE SCIENCE, v.350, no.1-3, pp.221 - 228, 1996-04

45
The strain relaxation in a lattice-mismatched heterostructure

Lim, YS; Lee, JeongYong; Kim, TW, JOURNAL OF CRYSTAL GROWTH, v.200, no.3-4, pp.421 - 426, 1999-04

46
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)

Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009

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