STRUCTURAL AND ELECTRICAL-PROPERTIES OF A STRAINED INSB/GAAS HETEROSTRUCTURE
- Publisher
- AKADEMIE VERLAG GMBH
- Issue Date
- 1994-03
- Language
- English
- Article Type
- Note
- Keywords
MOLECULAR-BEAM EPITAXY; CHEMICAL VAPOR-DEPOSITION; INSB; GROWTH; GAAS; INAS1-XSBX; SCATTERING; TRANSPORT; FILMS
- Citation
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.142, no.1, pp.23 - 27
- ISSN
- 0031-8965
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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