Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author Kang, Sang-Won
Showing results 49 to 108 of 126
| Characterization of $TiO_2$ thin films formed by plasma enhanced atomic layer deposition = PEALD법을 이용한 $TiO_2$ 박막 증착 및 특성에 관한 연구link Park, Pan-Kwi; 박판귀; et al, 한국과학기술원, 2002 |
| CMP의 기계적 공정 변수가 반도체 표면 평탄화의 균일도에 미치는 영향 = A effect of the mechanical factors on the uniformity in the chemical-mechanical polishing(CMP) of $SiO_2$ thin filmlink 김우찬; Kim, Woo-Chan; et al, 한국과학기술원, 1996 |
| Comparison of Tantalum Nitride Films for Different NH3/H-2/Ar Reactant States in Two-Step Atomic Layer Deposition Kwon, Jung-Dae; Yun, Jungheum; Kang, Sang-Won, JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.2, 2009 |
| Controlling the composition of Ti1–xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition Lee, Yong Ju; Kang, Sang-Won, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.21, no.5, pp.L13 - L15, 2003-08 |
| Controlling the temperature coefficient of resistance and resistivity in RuO2-TiO2 thin films by the intermixing ratios between RuO2 and TiO2 Kwon, Se-Hun; Kang, Sang-Won; Kim, Kwang-Ho, APPLIED PHYSICS LETTERS, v.92, no.18, 2008-05 |
| Cycle-CVD법을 이용한 tantalum oxide 원자층 단위 증착 및 특성에 관한 연구 = A study on atomic layer deposition and film characteristics of tantalum oxide using cycle-CVDlink 송현정; Song, Hyun-Jung; et al, 한국과학기술원, 1998 |
| Cyclic CVD 법으로 증착된 TiN 박막의 증착 기구와 특성에 관한 연구 = A study on deposition mechanism and characteristics of TiN thin films deposited by Cyclic CVDlink 손영웅; Sohn, Young-Woong; et al, 한국과학기술원, 1997 |
| Effect of crystallinity and nonstoichiometric region on dielectric properties of SrTiO3 films formed on Ru Kim, Ja-Yong; Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Jin-Hyock; Roh, Jae-Sung, APPLIED PHYSICS LETTERS, v.91, no.9, 2007-08 |
| Effect of Sr-ruthenate seed layer on dielectric properties of SrTiO3 thin films prepared by plasma-enhanced atomic layer deposition Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Ja-Yong; Kim, Jin-Hyock; Roh, Jae-Sung, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G185 - G188, 2008-08 |
| Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition Ahn, Ji-Hoon; Kim, Ja-Yong; Kim, Jin-Hyock; Roh, Jae-Sung; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.2, pp.G5 - G8, 2009 |
| Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3 Park, Pan Kwi; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.89, no.19, 2006-11 |
| Enhancement of iodine adsorption on ruthenium glue layer for seedless CECVD of Cu Lee, HB; Kwak, DK; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.2, pp.C39 - C42, 2005 |
| Enhancement of Iodine Adsorption Using I2 Plasma for Seedless Catalyst-Enhanced CVD of Copper Kwon, Oh-Kyum; Kim, Jae-Hoon; Park, Hyoung-Sang; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.8, pp.109 - 111, 2003-06 |
| Enhancement of the film growth rate by promoting iodine adsorption in the catalyst-enhanced chemical vapor deposition of Cu Kwon, OK; Lee, HB; Kang, Sang-Won; Park, HS, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A, v.20, no.2, pp.408 - 412, 2002 |
| Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate Joo, Dae-Kwon; Park, Jin-Seong; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.3, pp.H77 - H79, 2009 |
| Fabrication and Electrochemical Characterization of TiO2 Three-Dimensional Nanonetwork Based on Peptide Assembly Kim, Sung-Wook; Han, Tae Hee; Kim, Jongsoon; Gwon, Hyeokjo; Moon, Hyoung-Seok; Kang, Sang-Won; Kim, Sang Ouk; et al, ACS NANO, v.3, no.5, pp.1085 - 1090, 2009-05 |
| Formation of TiO2 thin films using NH3 as catalyst by metalorganic chemical vapor deposition Jung, Sung-Hoon; Kang, Sang-Won, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v.40, no.5A, pp.3147 - 3152, 2001-05 |
| Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films Park, JS; Kang, Sang-Won; Kim, H, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.3, pp.1327 - 1332, 2006 |
| Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition Lee, YJ; Kang, Sang-Won, THIN SOLID FILMS, v.446, no.2, pp.227 - 231, 2004-01 |
| High efficiency heating resistor comprising an oxide, liquid ejecting head and apparatus using the same Kang, Sang-Won; Kwon, Se-Hun |
| Improvement of copper diffusion barrier properties of tantalum nitride films by incorporating ruthenium using PEALD Kim, Sung-Wook; Kwon, Se-Hun; Jeong, Seong-Jun; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.11, pp.H885 - H888, 2008-09 |
| Improvement of morphological stability of PEALD-iridium thin films by adopting two-step annealing process Kim, Sung-Wook; Kwon, Se-Hun; Jeong, Seong-Jun; Park, Jin-Seong; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.11, pp.H303 - H305, 2008-09 |
| Improvement of Surface Morphology of Aluminum Thin Films Grown by Metallorganic Chemical Vapor Deposition Ahn, Seong-Deok; Lee, Hyun-Bae; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.3, no.4, pp.186 - 188, 2000-04 |
| Improvement of the dielectric properties of Ta2O5 and SiO2 based laminated materials Kang, Sang-Won, Atomic Layer Deposition 2002, ALD, 2002-08 |
| Improvement of the morphological stability by stacking RuO2 on ru thin films with atomic layer deposition Kwon, Se-Hun; Kwon, Oh-Kyum; Kim, Jae-Hoon; Jeong, Seong-Jun; Kim, Sung-Wook; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.9, pp.H773 - H777, 2007 |
| Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes Ahn, Ji-Hoon; Kim, Ja-Yong; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.91, no.6, 2007-08 |
| Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates Song, Hyun-Jung; Lee, Choon-Soo; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.4, no.7, pp.F13 - F14, 2001-07 |
| Influence of substrate bias voltage on structure and properties of Cr-Mo-Si-N coatings prepared by a hybrid coating system Hong, Seung Gyun; Kwon, Se-Hun; Kang, Sang-Won; Kim, Kwang Ho, SURFACE & COATINGS TECHNOLOGY, v.203, no.5-7, pp.624 - 627, 2008-12 |
| Initial stages of ruthenium film growth in plasma-enhanced atomic layer deposition Kwon, Se-Hun; Kwon, Oh-Kyum; Kim, Jin-Hyock; Oh, Heung-Ryong; Kim, Kwang-Ho; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.5, pp.H296 - H300, 2008-03 |
| Interface effect on dielectric constant of HfO2/Al 2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition Park, Pan Kwi; Cha, Eun-Soo; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.90, no.23, pp.232906, 2007-06 |
| Interfacial reaction in the sputter-deposited SiO2/Ti0.1W0.9 antifuse system Baek, Jong Tae; Park, Hyung-Ho; Cho, Kyung-Ik; Yoo, Hyung Joun; Kang, Sang-Won; Ahn, Byung Tae, JOURNAL OF APPLIED PHYSICS, v.78, no.12, pp.7074 - 7079, 1995-12 |
| Investigation of link formation in a novel planar-type antifuse structure Baek, Jong Tae; Park, Hyung-Ho; Kang, Sang-Won; Ahn, Byung Tae; Yoo, Hyung Joun, THIN SOLID FILMS, v.288, no.1-2, pp.41 - 44, 1996-11 |
| Investigation of link formation in a novel planar-type antifuse structure Baek, Jong Tae; Park, Hyung-Ho; Kang, Sang-Won; Ahn, Byung Tae; Yoo, Ilyung, Thin Solid Films, 288, 41-44, 1996-02-20 |
| Investigation of link formation in a novel planar-type antifuse structure Baek, Jong Tae; Park, Hyung-Ho; Kang, Sang-Won; Ahn, Byung Tae; Yoo, Hyung-Joun, Thin Solid Films 288 (1996) 41--44, 1996-02 |
| Kinetic model for cavity filling in CECVD of copper = 촉매 처리에 의한 구리 CECVD의 cavity filling 현상에 관한 모델link Lee, Hyun-Bae; 이현배; et al, 한국과학기술원, 2005 |
| Kinetic Modeling for Multi-Component Thin Film Growth in Plasma Enhanced Atomic Layer Deposition Kang, Sang-Won, 203rd ECS Meeting, ECS, 2003-04 |
| Kinetic modeling of film growth rates of TiN films in atomic layer deposition Lim, Jung-Wook; Park, Jin-Seong; Kang, Sang-Won, JOURNAL OF APPLIED PHYSICS, v.87, no.9, pp.4632 - 4634, 2000-05 |
| Measurement of thermal expansion coefficient of poly-Si using microgauge sensors Chae, Jung-Hun; Lee, Jae-Youl; Kang, Sang-Won, SPIE Vol. 3242, pp.202-211, 1997 |
| Measurement of thermal expansion coefficient of poly-Si using microgauge sensors Chae, JH; Lee, JY; Kang, Sang-Won, SENSORS AND ACTUATORS A-PHYSICAL, v.75, no.3, pp.222 - 229, 1999-06 |
| Metalorganic chemical vapor deposition of copper on ruthenium thin film Kwak, Dong-Kee; Lee, Hyun-Bae; Han, Jae-Won; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.10, pp.C171 - C173, 2006 |
| Metal–organic atomic-layer deposition of titanium–silicon–nitride films Min, Jae-Sik; Park, Hyung-Sang; Kang, Sang-Won, APPLIED PHYSICS LETTERS 99 75(11) 1521-1523, 1999-07-19 |
| Optimizing electrical and mechanical properties of reaction-sintered SiC by using different-sized SiC particles in preform Jeon Y.-S.; Shin H.; Park J.-S.; Kang, Sang-Won, 한국세라믹학회지, v.45, no.8, pp.439 - 442, 2008 |
| Phase control of iridium and iridium oxide thin films in atomic layer deposition Kim, Sung-Wook; Kwon, Se-Hun; Kwak, Dong-Kee; Kang, Sang-Won, JOURNAL OF APPLIED PHYSICS, v.103, no.2, 2008-01 |
| Plasma enhanced atomic layer deposition of transition metal nitrides (Invited talk) Kang, Sang-Won, Atomic Layer Deposition conference, ALD, 2001-05 |
| Plasma-Enhanced Atomic Layer Deposition of Aluminum Grown by a Sequential Supply of TMA and H2 Kang, Sang-Won, 3rd International AVS Conference on Microelectronics and Interfaces, ICMI, 2002-02 |
| Plasma-enhanced atomic layer deposition of Ta-N thin films Park, JS; Park, HS; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.1, pp.28 - 32, 2002-01 |
| Plasma-enhanced atomic layer deposition of TaN thin films using tantalum-pentafluoride and N-2/H-2/Ar plasma Chung, Hoi-Sung; Kwon, Jung-Dae; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.11, pp.C751 - C754, 2006 |
| Plasma-enhanced atomic layer deposition of tantalum nitrides using hydrogen radicals as a reducing agent Park, JS; Lee, MJ; Lee, CS; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.4, no.4, pp.17 - 19, 2001-04 |
| Reduced electrical resistivity of reaction-sintered SiC by nitrogen doping Jeon, Young-Sam; Shin, Hyunho; Lee, Young-Hyun; Kang, Sang-Won, JOURNAL OF MATERIALS RESEARCH, v.23, no.4, pp.1020 - 1025, 2008-04 |
| Reduction of Leakage Current at the Gate Edge of SDB SO1 NMOS Transistor Kang, Sung-Weon; Lyu, Jong-Son; Kang, Jin-Young; Kang, Sang-Won; Lee, Jin-Hyo, IEEE ELECTRON DEVICE LETTERS, v.16, no.6, pp.236 - 236, 1995-06 |
| Slurry thickness에 따른 CMP modeling에 관한 연구 = A study on the modeling of chemical-mechanical polishing (CMP) depending on slurry thicknesslink 김우찬; Kim, Woo-Chan; et al, 한국과학기술원, 2003 |
| Step coverage modeling of thin films in atomic layer deposition Kim, Ja-Yong; Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Jin-Hyock, JOURNAL OF APPLIED PHYSICS, v.101, no.7, 2007-04 |
| Studies on Microvoids at the Interface of Direct Bonded Silicon Wafers Yun, Sun-Jin; Ahn, Kun-Young; Yi, Kyoung-Soo; Kang, Sang-Won, Journal of The Electrochemical Society, 139(8), 2326-2330, 1992-08 |
| STUDIES ON MICROVOIDS AT THE INTERFACE OF DIRECT BONDED SILICON-WAFERS Yun, Sun-Jin; Ahn, Kun-Young; Yi, Kyoung-Soo; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.139, no.8, pp.2326 - 2330, 1992-08 |
| A Study of Cu Metal Deposition on Amorphous Si Film from Cu solution for Low-Temperature Crystallization of Amorphous Si Films Sohn, Dong-Hyun; Lee, Jeong No; Kang, Sang-Won; Ahn, Byung Tae, Journal of The Electrochemical Society, vol.144, no.10, pp.3592-3596, 1997-07-01 |
| Study of Interaction between Incident Silicon and Germanium Fluxes and SiO2 Layer Using Solid-Source Molecular Beam Epitaxy Yun, Sun-Jin; Lee, Seung-Chang; Kim, Bo-Woo; Kang, Sang-Won, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.12, no.2, pp.1167 - 1169, 1994-03 |
| Surface morphology improvement of metalorganic chemical vapor deposition Al films by layered deposition of Al and ultrathin TiN Ahn, Seong-Deok; Lee, Hyun-Bae; Kang, Sang-Won, JAPANESE JOURNAL OF APPLIED PHYSICS, v.39, no.6A, pp.3349 - 3354, 2000-06 |
| The Characteristics of tantalum nitride films Deposited by plasma enhanced atomic layer deposition using hydrogen radical as reduced agent Kang, Sang-Won, The Second Asian Conference on Chemical Vapor Deposition, Asian Conference on Chemical Vapor Deposition, 2001-05 |
| THE EFFECT OF AMORPHOUS-SILICON CAPPING ON TITANIUM DURING TISI2 FORMATION BY RTA Kang, Sang-Won; Park, Sin Chong; Chun , Soung Soon, JOURNAL OF MATERIALS SCIENCE, v.25, no.1A, pp.98 - 102, 1990-01 |
| The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films Min, Jae-Sik; Park, Jin-Seong; Park, Hyung-Sang; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.10, pp.3868 - 3872, 2000-06 |
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