A class-E CMOS RF power amplifier with cascaded class-D driver amplifier
A 800-MHz power amplifier is designed using a 0.18-mu m RF CMOS process. The voltage-combining Method is used for power combining. A transmission line transformer on a printed circuit board (PCB) is designed as a power combiner. For the switching mode power amplifier, a cascaded class-D driver amplifier is proposed using a feedback resistor and a DC-blocking capacitor. The power amplifier has an output power of 32.9 dBm and a power-added efficiency of 60.25%. (c) 2007 Wiley Periodicals, Inc.
- Publisher
- Wiley-Blackwell
- Issue Date
- 2008-02
- Language
- English
- Article Type
- Article
- Keywords
DISTRIBUTED ACTIVE-TRANSFORMER; MODULATOR
- Citation
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.50, no.2, pp.470 - 473
- ISSN
- 0895-2477
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 4 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.