Thermally Induced Deformation Measurement of Through-Silicon Via (TSV) Structures using an Atomic Force Microscope (AFM) Moiré Method

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dc.contributor.authorJang, Jae-Wonko
dc.contributor.authorLee, Soon-Bokko
dc.date.accessioned2013-03-29T09:37:45Z-
dc.date.available2013-03-29T09:37:45Z-
dc.date.created2012-07-04-
dc.date.created2012-07-04-
dc.date.created2012-07-04-
dc.date.issued2012-08-20-
dc.identifier.citationIEEE Nano 2012-
dc.identifier.urihttp://hdl.handle.net/10203/169815-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleThermally Induced Deformation Measurement of Through-Silicon Via (TSV) Structures using an Atomic Force Microscope (AFM) Moiré Method-
dc.typeConference-
dc.identifier.wosid000309933900279-
dc.identifier.scopusid2-s2.0-84869164920-
dc.type.rimsCONF-
dc.citation.publicationnameIEEE Nano 2012-
dc.identifier.conferencecountryUK-
dc.identifier.conferencelocationBirmingham-
dc.contributor.localauthorLee, Soon-Bok-
dc.contributor.nonIdAuthorJang, Jae-Won-
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ME-Conference Papers(학술회의논문)
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