A simple flash memory cell model for transient circuit simulation
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang, YH | ko |
| dc.contributor.author | Hong, Songcheol | ko |
| dc.date.accessioned | 2007-09-27T12:55:26Z | - |
| dc.date.available | 2007-09-27T12:55:26Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-08 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.26, no.8, pp.563 - 565 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1570 | - |
| dc.description.abstract | A simple Flash memory cell model for circuit simulation is presented. The proposed model gives an excellent fitting of do and transient data and does not require additional simulation time comparing with that of a MOSFET transistor. Effective control-gate voltage method and ideal current-mirror technique are introduced to calculate floating-gate voltage. These allow macro modeling of a Flash memory cell in a circuit simulator. | - |
| dc.description.sponsorship | This work was supported in part by the Flash team, Memory Division, Samsung Electronics Company, Ltd., and in part by the MOE BK21 program. | en |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | CAPACITIVE COUPLING-COEFFICIENTS | - |
| dc.title | A simple flash memory cell model for transient circuit simulation | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000230802600015 | - |
| dc.identifier.scopusid | 2-s2.0-23844544654 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 26 | - |
| dc.citation.issue | 8 | - |
| dc.citation.beginningpage | 563 | - |
| dc.citation.endingpage | 565 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.identifier.doi | 10.1109/LED.2005.852525 | - |
| dc.contributor.localauthor | Hong, Songcheol | - |
| dc.contributor.nonIdAuthor | Kang, YH | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | erase | - |
| dc.subject.keywordAuthor | flash EEPROM | - |
| dc.subject.keywordAuthor | flash memory | - |
| dc.subject.keywordAuthor | flash model | - |
| dc.subject.keywordAuthor | macro model | - |
| dc.subject.keywordAuthor | program | - |
| dc.subject.keywordPlus | CAPACITIVE COUPLING-COEFFICIENTS | - |
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