High-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation

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Issue Date
2004-12-13
Language
ENG
Citation

International Electron Device Meeting (IEDM), December 2004, pp.889 - 892

URI
http://hdl.handle.net/10203/150855
Appears in Collection
EE-Conference Papers(학술회의논문)
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