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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

High-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorTan, YN-
dc.contributor.authorChim, WK-
dc.contributor.authorChoi, WK-
dc.contributor.authorSig, JM-
dc.contributor.authorHau, NT-
dc.date.accessioned2013-03-18T17:44:43Z-
dc.date.available2013-03-18T17:44:43Z-
dc.date.created2012-02-06-
dc.date.issued2004-12-13-
dc.identifier.citationInternational Electron Device Meeting (IEDM), December 2004, v., no., pp.889 - 892-
dc.identifier.urihttp://hdl.handle.net/10203/150855-
dc.languageENG-
dc.titleHigh-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage889-
dc.citation.endingpage892-
dc.citation.publicationnameInternational Electron Device Meeting (IEDM), December 2004-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorTan, YN-
dc.contributor.nonIdAuthorChim, WK-
dc.contributor.nonIdAuthorChoi, WK-
dc.contributor.nonIdAuthorSig, JM-
dc.contributor.nonIdAuthorHau, NT-
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EE-Conference Papers(학술회의논문)
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