InP-based OEIC Photoreceivers using Shared Layer Integration Technology of Heterojunction Bipolar Transistors and Refracting-Facet Photodiodes
- Issue Date
- 2003-09-16
- Language
- ENG
- Citation
Int. Conf. on Solid State Devices and Materials, pp.182 - 183
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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