InP-based OEIC Photoreceivers using Shared Layer Integration Technology of Heterojunction Bipolar Transistors and Refracting-Facet Photodiodes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, B | - |
| dc.contributor.author | Song,Y | - |
| dc.contributor.author | Yang, Kyounghoon | - |
| dc.date.accessioned | 2013-03-18T17:15:17Z | - |
| dc.date.available | 2013-03-18T17:15:17Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-09-16 | - |
| dc.identifier.citation | Int. Conf. on Solid State Devices and Materials, v., no., pp.182 - 183 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/150587 | - |
| dc.language | ENG | - |
| dc.title | InP-based OEIC Photoreceivers using Shared Layer Integration Technology of Heterojunction Bipolar Transistors and Refracting-Facet Photodiodes | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 182 | - |
| dc.citation.endingpage | 183 | - |
| dc.citation.publicationname | Int. Conf. on Solid State Devices and Materials | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | Lee, B | - |
| dc.contributor.nonIdAuthor | Song,Y | - |
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