DSpace at KOASAS: The estimation of the crystalline behavior and electrical property of nominal-composition Ge2Sb2Te5 thin films for phase change random access memory

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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

The estimation of the crystalline behavior and electrical property of nominal-composition Ge2Sb2Te5 thin films for phase change random access memory

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Choi, Si-Kyung researcher / Kim, HJ

Issue Date: 2005

Language: ENG

Citation: 2005 GIST/KAIST/Kyoto University/Tohoku University Joint Symposium on Advanced Materials

URI: http://hdl.handle.net/10203/147708

Appears in Collection: MS-Conference Papers(학술회의논문)

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The estimation of the crystalline behavior and electrical property of nominal-composition Ge2Sb2Te5 thin films for phase change random access memory

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