The estimation of the crystalline behavior and electrical property of nominal-composition Ge2Sb2Te5 thin films for phase change random access memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Si-Kyung | - |
| dc.contributor.author | Kim, HJ | - |
| dc.date.accessioned | 2013-03-18T11:02:26Z | - |
| dc.date.available | 2013-03-18T11:02:26Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005 | - |
| dc.identifier.citation | 2005 GIST/KAIST/Kyoto University/Tohoku University Joint Symposium on Advanced Materials, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/147708 | - |
| dc.language | ENG | - |
| dc.title | The estimation of the crystalline behavior and electrical property of nominal-composition Ge2Sb2Te5 thin films for phase change random access memory | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2005 GIST/KAIST/Kyoto University/Tohoku University Joint Symposium on Advanced Materials | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Choi, Si-Kyung | - |
| dc.contributor.nonIdAuthor | Kim, HJ | - |
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