Effect of thermal annealing on the formation and the microstructural properties of the interfacial layer between ZnO thin films and n-Si (001) substrates

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Publisher
International Symposium on the Physics of Semiconductors and Applications(ISPSA)
Issue Date
2006-08-22
Language
English
Citation

The 13th International Symposium on the Physics of Semiconductors and Applications

URI
http://hdl.handle.net/10203/145297
Appears in Collection
MS-Conference Papers(학술회의논문)
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