Effect of thermal annealing on the formation and the microstructural properties of the interfacial layer between ZnO thin films and n-Si (001) substrates

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dc.contributor.authorYuk, Jong Min-
dc.contributor.authorLee, Jeong Yong-
dc.date.accessioned2013-03-18T05:50:30Z-
dc.date.available2013-03-18T05:50:30Z-
dc.date.created2012-02-06-
dc.date.issued2006-08-22-
dc.identifier.citationThe 13th International Symposium on the Physics of Semiconductors and Applications-
dc.identifier.urihttp://hdl.handle.net/10203/145297-
dc.languageEnglish-
dc.publisherInternational Symposium on the Physics of Semiconductors and Applications(ISPSA)-
dc.titleEffect of thermal annealing on the formation and the microstructural properties of the interfacial layer between ZnO thin films and n-Si (001) substrates-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 13th International Symposium on the Physics of Semiconductors and Applications-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocation라마다호텔, 제주-
dc.contributor.localauthorYuk, Jong Min-
dc.contributor.localauthorLee, Jeong Yong-
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MS-Conference Papers(학술회의논문)
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