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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Journal Papers(저널논문)

DISTRIBUTION OF INTERFACIAL AS ATOMS IN THE ELECTRON-BEAM EXPOSURE AND EPITAXY (EBE-EPITAXY) TECHNIQUE FOR GROWING GAAS FILMS ON CAF2/SI(111) STRUCTURES

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Lee, Hee Chul researcher / ISHIWARA, H / FURUKAWA, S / SAIKI, K / KOMA, A

Publisher: ELSEVIER SCIENCE BV

Issue Date: 1989-11

Language: English

Article Type: Article

Citation: APPLIED SURFACE SCIENCE, v.41-2, pp.553 - 558

ISSN: 0169-4332

DOI: 10.1016/0169-4332(89)90121-9

URI: http://hdl.handle.net/10203/14482

Appears in Collection: EE-Journal Papers(저널논문)

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DISTRIBUTION OF INTERFACIAL AS ATOMS IN THE ELECTRON-BEAM EXPOSURE AND EPITAXY (EBE-EPITAXY) TECHNIQUE FOR GROWING GAAS FILMS ON CAF2/SI(111) STRUCTURES

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