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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Journal Papers(저널논문)

DISTRIBUTION OF INTERFACIAL AS ATOMS IN THE ELECTRON-BEAM EXPOSURE AND EPITAXY (EBE-EPITAXY) TECHNIQUE FOR GROWING GAAS FILMS ON CAF2/SI(111) STRUCTURES

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dc.contributor.authorLee, Hee Chulko
dc.contributor.authorISHIWARA, Hko
dc.contributor.authorFURUKAWA, Sko
dc.contributor.authorSAIKI, Kko
dc.contributor.authorKOMA, Ako
dc.date.accessioned2009-12-09T08:23:52Z-
dc.date.available2009-12-09T08:23:52Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1989-11-
dc.identifier.citationAPPLIED SURFACE SCIENCE, v.41-2, pp.553 - 558-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10203/14482-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELSEVIER SCIENCE BV-
dc.titleDISTRIBUTION OF INTERFACIAL AS ATOMS IN THE ELECTRON-BEAM EXPOSURE AND EPITAXY (EBE-EPITAXY) TECHNIQUE FOR GROWING GAAS FILMS ON CAF2/SI(111) STRUCTURES-
dc.typeArticle-
dc.identifier.wosidA1989CE22000095-
dc.identifier.scopusid2-s2.0-0024769162-
dc.type.rimsART-
dc.citation.volume41-2-
dc.citation.beginningpage553-
dc.citation.endingpage558-
dc.citation.publicationnameAPPLIED SURFACE SCIENCE-
dc.identifier.doi10.1016/0169-4332(89)90121-9-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorISHIWARA, H-
dc.contributor.nonIdAuthorFURUKAWA, S-
dc.contributor.nonIdAuthorSAIKI, K-
dc.contributor.nonIdAuthorKOMA, A-
dc.type.journalArticleArticle-
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