Memory window improvement effect in boron-doped Si nanocrystal memory

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Publisher
123
Issue Date
2006-07-24
Language
English
Citation

28th International Conference on the Physics of Semiconductors, ICPS 2006, pp.803 - 804

URI
http://hdl.handle.net/10203/139852
Appears in Collection
EE-Conference Papers(학술회의논문)
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