Memory window improvement effect in boron-doped Si nanocrystal memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Bang, K. | ko |
| dc.contributor.author | Kim, S. | ko |
| dc.contributor.author | Lim, Koeng Su | ko |
| dc.date.accessioned | 2013-03-17T04:29:32Z | - |
| dc.date.available | 2013-03-17T04:29:32Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2006-07-24 | - |
| dc.identifier.citation | 28th International Conference on the Physics of Semiconductors, ICPS 2006, pp.803 - 804 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/139852 | - |
| dc.language | English | - |
| dc.publisher | 123 | - |
| dc.title | Memory window improvement effect in boron-doped Si nanocrystal memory | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000246281800394 | - |
| dc.identifier.scopusid | 2-s2.0-77958493839 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 803 | - |
| dc.citation.endingpage | 804 | - |
| dc.citation.publicationname | 28th International Conference on the Physics of Semiconductors, ICPS 2006 | - |
| dc.identifier.conferencecountry | AU | - |
| dc.identifier.conferencelocation | Vienna | - |
| dc.contributor.localauthor | Lim, Koeng Su | - |
| dc.contributor.nonIdAuthor | Bang, K. | - |
| dc.contributor.nonIdAuthor | Kim, S. | - |
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