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Showing results 9 to 16 of 16

9
Improved modified embedded-atom method potentials for gold and silicon

Ryu, Seunghwa; Weinberger, Christopher R.; Baskes, Michael I.; Cai, Wei, MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, v.17, no.7, 2009-10

10
Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density

Jung, Yongduck; Burt, Daniel; Zhang, Lin; Kim, Youngmin; Joo, Hyo-Jun; Chen, Melvina; Assali, Simone; et al, PHOTONICS RESEARCH, v.10, no.6, pp.1332 - 1337, 2022-06

11
Resonant nanostructures for highly confined and ultra-sensitive surface phonon-polaritons

Dubrovkin Alexander M.; Qiang, Bo; Salim, Teddy; Nam, Donguk; Zheludev, Nikolay I; Wang, Qi Jie, NATURE COMMUNICATIONS, v.11, no.1, 2020-04

12
Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles

Nam, Donguk; Sukhdeo, David S.; Kang, Ju-Hyung; Petykiewicz, Jan; Lee, Jae Hyung; Jung, Woo Shik; Vuckovic, Jelena; et al, NANO LETTERS, v.13, no.7, pp.3118 - 3123, 2013-07

13
Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks

Burt, Daniel; Joo, Hyo-Jun; Jung, Yongduck; Kim Youngmin; Chen Melvina; Huang Yi-Chiau; Nam, Donguk, OPTICS EXPRESS, v.29, no.18, pp.28959 - 28967, 2021-08

14
Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser

Nam, Donguk; Sukhdeo, David S.; Gupta, Shashank; Kang, Ju-Hyung; Brongersma, Mark L.; Saraswat, Krishna C., IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.20, no.4, 2014-07

15
Theoretical Modeling for the Interaction of Tin Alloying With N-Type Doping and Tensile Strain for GeSn Lasers

Sukhdeo, David; Kim, Yeji; Gupta, Shashank; Saraswat, Krishna; Dutt, Birendra; Nam, Donguk, IEEE ELECTRON DEVICE LETTERS, v.37, no.10, pp.1307 - 1310, 2016-10

16
Ultimate limits of biaxial tensile strain and n-type doping for realizing an efficient low-threshold Ge laser

Sukhdeo, David S.; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra (Raj); Nam, Donguk, JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.2, 2016-02

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