Browse "Dept. of Mechanical Engineering(기계공학과)" by Subject GERMANIUM

Showing results 5 to 10 of 10

5
Ge microdisk with lithographically-tunable strain using CMOS-compatible process

Sukhdeo, David S.; Petykiewicz, Jan; Gupta, Shashank; Kim, Daeik; Woo, Sungdae; Kim, Youngmin; Vuckovic, Jelena; et al, OPTICS EXPRESS, v.23, no.26, pp.33249 - 33254, 2015-12

6
Improved modified embedded-atom method potentials for gold and silicon

Ryu, Seunghwa; Weinberger, Christopher R.; Baskes, Michael I.; Cai, Wei, MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, v.17, no.7, 2009-10

7
Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles

Nam, Donguk; Sukhdeo, David S.; Kang, Ju-Hyung; Petykiewicz, Jan; Lee, Jae Hyung; Jung, Woo Shik; Vuckovic, Jelena; et al, NANO LETTERS, v.13, no.7, pp.3118 - 3123, 2013-07

8
Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser

Nam, Donguk; Sukhdeo, David S.; Gupta, Shashank; Kang, Ju-Hyung; Brongersma, Mark L.; Saraswat, Krishna C., IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.20, no.4, 2014-07

9
Theoretical Modeling for the Interaction of Tin Alloying With N-Type Doping and Tensile Strain for GeSn Lasers

Sukhdeo, David; Kim, Yeji; Gupta, Shashank; Saraswat, Krishna; Dutt, Birendra; Nam, Donguk, IEEE ELECTRON DEVICE LETTERS, v.37, no.10, pp.1307 - 1310, 2016-10

10
Ultimate limits of biaxial tensile strain and n-type doping for realizing an efficient low-threshold Ge laser

Sukhdeo, David S.; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra (Raj); Nam, Donguk, JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.2, 2016-02

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