DSpace at KOASAS: Investigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate

DSpace at KOASAS

College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Investigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gateInvestigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate

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Cho, Byung Jin researcher / Ko, LH / Nga, YA / Chan, LH

Issue Date: 1998-11-30

Language: ENG

Citation: Abstract Proc. of the Asia-Pacific SIA'98 Conf., pp.0 - 0

URI: http://hdl.handle.net/10203/119480

Appears in Collection: EE-Conference Papers(학술회의논문)

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Investigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gateInvestigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate

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