Investigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gateInvestigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorKo, LH-
dc.contributor.authorNga, YA-
dc.contributor.authorChan, LH-
dc.date.accessioned2013-03-15T12:30:58Z-
dc.date.available2013-03-15T12:30:58Z-
dc.date.created2012-02-06-
dc.date.issued1998-11-30-
dc.identifier.citationAbstract Proc. of the Asia-Pacific SIA'98 Conf., v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/119480-
dc.languageENG-
dc.titleInvestigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate-
dc.title.alternativeInvestigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameAbstract Proc. of the Asia-Pacific SIA'98 Conf.-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorKo, LH-
dc.contributor.nonIdAuthorNga, YA-
dc.contributor.nonIdAuthorChan, LH-
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EE-Conference Papers(학술회의논문)
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