Low-jitter multi-phase digital DLL with closest edge selection scheme for DDR memory interface

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dc.contributor.authorOh, Kwang-Il-
dc.contributor.authorKim, Lee-Sup-
dc.contributor.authorPark, Kwang-Il-
dc.contributor.authorJun, Young-Hyun-
dc.contributor.authorKim, Kinam-
dc.date.accessioned2009-09-22T01:04:17Z-
dc.date.available2009-09-22T01:04:17Z-
dc.date.issued2008-09-
dc.identifier.citationIEE Electronics Letters, Vol. 44, No. 19en
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/11422-
dc.description.abstractA multi-phase digital delay-locked loop (DLL) capable of a low-jitter feature for DDR memory interface is reported. The DLL repeatedly selects the output clock edge which is closest to the reference clock edge to reduce the total jitter. A test chip was fabricated in a 0.18um CMOS process to verify its functionality. The measured RMS and peak-to-peak jitter of the DLL are 6.2 and 20.4ps, respectively. The power consumption of the DLL is 12mW from a 1.8V supply voltage.en
dc.language.isoen_USen
dc.publisherIEEEen
dc.titleLow-jitter multi-phase digital DLL with closest edge selection scheme for DDR memory interfaceen
dc.typeArticleen
dc.identifier.doi10.1049/el:20081833-

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