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Atomic structure of defect complexes containing carbon and hydrogen in GaAs Lee, SG; Chang, Kee-Joo, PHYSICAL REVIEW B, v.54, no.12, pp.8522 - 8526, 1996-09 |
COMPENSATION AND DIFFUSION MECHANISMS OF CARBON DOPANTS IN GAAS CHEONG, BH; Chang, Kee-Joo, PHYSICAL REVIEW B, v.49, no.24, pp.17436 - 17439, 1994-06 |
Increase in In0.32Ga0.68P band-gap energy due to the electron capturing of DX centers N. Y. Lee; Park, Hae Yong; S. D. Kwon; H. K. Shin; H. Lim; Kim, Jae Eun, SOLID STATE COMMUNICATIONS, v.102, no.10, pp.763 - 767, 1997-06 |
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