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Showing results 1 to 5 of 5

1
Controlling optical properties of Ge-on-Si by thermal annealing and etching process

Lee, Chulwon; Ki, Bugeun; Yoo, Yang-Seok; Jang, Minho; Oh, Jungwoo; Cho, Yong-Hoon, 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Institute of Electrical and Electronics Engineers Inc., 2015-08

2
Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing

Lee, Chulwon; Yoo, Yang-Seok; Ki, Bugeun; Jang, Minho; Lim, Seung-Hyuk; Song, Hyun Gyu; Cho, Jong-Hoi; et al, SCIENTIFIC REPORTS, v.9, pp.11709, 2019-08

3
Phosphorus implantation into in situ doped Ge-on-Si for high light-emitting efficiency

Baek, Jiwoong; Ki, Bugeun; Kim, Daeik; Lee, Chulwon; Nam, Donguk; Cho, Yong-Hoon; Oh, Jungwoo, OPTICAL MATERIALS EXPRESS, v.6, no.9, pp.2939, 2016-09

4
Raman analysis of in-plane biaxial strain for Ge-on-Si lasers

Ki, Bugeun; Baek, Jiwoong; Lee, Chulwon; Cho, Yong-Hoon; Oh, Jungwoo, 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Institute of Electrical and Electronics Engineers Inc., 2015-08

5
Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates

Ki, Bugeun; Kim, Kyung Ho; Kim, Hyungjun; Lee, Chulwon; Cho, Yong-Hoon; Oh, Jungwoo, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.5, pp.5239 - 5242, 2016-05

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