An Investigation on the Resistivity Abnormaly Phenomenon in highly Boron-doped Cz Silicon Substrate during NMOS Simulation and High Temperature Annealing

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Publisher
Electrochemical Society
Issue Date
1994-05
Language
English
Citation

San Francisco Meeting of the Electrochemical Society, pp.22 - 27

URI
http://hdl.handle.net/10203/108771
Appears in Collection
MS-Conference Papers(학술회의논문)
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