An Investigation on the Resistivity Abnormaly Phenomenon in highly Boron-doped Cz Silicon Substrate during NMOS Simulation and High Temperature Annealing
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, JeongYong | ko |
| dc.date.accessioned | 2013-03-14T12:36:31Z | - |
| dc.date.available | 2013-03-14T12:36:31Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-05 | - |
| dc.identifier.citation | San Francisco Meeting of the Electrochemical Society, pp.22 - 27 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/108771 | - |
| dc.language | English | - |
| dc.publisher | Electrochemical Society | - |
| dc.title | An Investigation on the Resistivity Abnormaly Phenomenon in highly Boron-doped Cz Silicon Substrate during NMOS Simulation and High Temperature Annealing | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 22 | - |
| dc.citation.endingpage | 27 | - |
| dc.citation.publicationname | San Francisco Meeting of the Electrochemical Society | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | San Francisco, CA | - |
| dc.contributor.localauthor | Lee, JeongYong | - |
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