Browse bySubject1.3 MU-M

Showing results 1 to 4 of 4

Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode

Ryu, SP; Lee, YT; Cho, NK; Choi, WJ; Song, JD; Kwack, HS; Cho, Yong-Hoonresearcher, JOURNAL OF APPLIED PHYSICS, v.102, pp.561 - 569, 2007-07

Fourier-domain optical coherence tomography: recent advances toward clinical utility

Bourna, Brett E.; Yun, Seok Hyun; Vakoc, Benjamin J.; Suter, Melissa J.; Tearney, Guillermo J., CURRENT OPINION IN BIOTECHNOLOGY, v.20, no.1, pp.111 - 118, 2009-02

Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

Rieh, JS; Klotzkin, D; Qasaimeh, Q; Lu, LH; Yang, Kyounghoonresearcher; Katehi, LPB; Bhattacharya, P; et al, IEEE PHOTONICS TECHNOLOGY LETTERS, v.10, no.3, pp.415 - 417, 1998-03

Role of insertion layer controlling wavelength in InGaAs quantum dots

Park, SK; Park, YJ; Kim, EK; Park, CJ; Cho, HY; Lim, YS; Lee, JeongYongresearcher; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, pp.4378 - 4381, 2002-06



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