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PHOTOLUMINESCENCE DUE TO HOLE CAPTURING OF DX- CENTERS IN In0.32Ga0.68:P S Lee, Nam-Young; Hwang, Insun; Kim, Jae Eun; Park, Hae Yong; Kwon, Ho Ki; Choe, B.D.; Lim, H., SOLID STATE COMMUNICATIONS, v.105, no.1, pp.1 - 5, 1997-01 |
The origin of persistent photoconductivity in compensated hydrogenated amorphous silicon Lee, H; Lee, C; Shin, Sung-Chul, SOLID STATE COMMUNICATIONS, v.102, no.11, pp.791 - 794, 1997-06 |
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