PHOTOLUMINESCENCE DUE TO HOLE CAPTURING OF DX- CENTERS IN In0.32Ga0.68:P S
The photoluminescence (PL) characteristics of S-doped In0.32Ga0.68P epilayer grown by liquid phase epitaxy have been studied in the temperature range of 20-300 K. In addition to the two peaks of the near band-edge emission and the donor-to-acceptor transition, a third peak of 2.199 eV at 74 K is observed in a narrow sample temperature range. It is shown that the appearance of this peak is related to the DX centers. The transition is attributed to the recombination of the neutral donor with a hole bound to the DX- center. (C) 1997 Elsevier Science Ltd.
- Publisher
- Pergamon-Elsevier Science Ltd
- Issue Date
- 1997-01
- Language
- English
- Article Type
- Article
- Keywords
ALXGA1-XAS ALLOYS; LASERS; ALGAAS; INGAP; GAAS
- Citation
SOLID STATE COMMUNICATIONS, v.105, no.1, pp.1 - 5
- ISSN
- 0038-1098
- Appears in Collection
- PH-Journal Papers(저널논문)
- Files in This Item
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