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Showing results 1 to 15 of 15

1	A Printable Form of Single-Crystalline Gallium Nitride for Flexible Optoelectronic Systems Lee, Keonjae; Lee, Jaeseob; Hwang, Heedon; Reitmeier, Zachary J.; Davis, Robert F.; Rogers, John A.; Nuzzo, Ralph G., SMALL, v.1, no.12, pp.1164 - 1168, 2005-07
2	A selective growth of III-nitride by MOCVD for a buried-ridge type structure Yang, M; Cho, M; Kim, C; Yi, J; Jeon, J; Khym, S; Kim, M; et al, JOURNAL OF CRYSTAL GROWTH, v.226, no.1, pp.73 - 78, 2001-06
3	Cubic Mesoporous Graphitic Carbon(IV) Nitride: An All-in-One Chemosensor for Selective Optical Sensing of Metal Ions Lee, Eun Zoo; Jun, Young-Si; Hong, Won-Hi; Thomas, Arne; Jin, Moonsoo M., ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.49, no.50, pp.9706 - 9710, 2010
4	Enhanced optical properties of InGaN MQWs with InGaN underlying layers Son, JK; Lee, SN; Sakong, T; Paek, HS; Nam, O; Park, Y; Hwang, JS; et al, JOURNAL OF CRYSTAL GROWTH, v.287, pp.558 - 561, 2006-01
5	Excitonic transitions in (Ga1-xMx)N thin films with high Curie temperature Jeon, HC; Lee, JA; Shon, Y; Lee, SJ; Kang, TW; Kim, TW; Yeo, YK; et al, JOURNAL OF CRYSTAL GROWTH, v.278, pp.671 - 674, 2005-05
6	Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells Lee, Sung-Nam; Paek, H. S.; Kim, H.; Kim, K. K.; Cho, Yong-Hoon; Jang, T.; Park, Y., JOURNAL OF CRYSTAL GROWTH, v.310, no.16, pp.3881 - 3883, 2008-08
7	Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers Cho, HK; Lee, KH; Kim, SW; Park, KS; Cho, Yong-Hoon; Lee, JH, JOURNAL OF CRYSTAL GROWTH, v.267, pp.67 - 73, 2004-06
8	Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD Lee, SN; Son, J; Sakong, T; Lee, W; Paek, H; Yoon, E; Kim, J; et al, JOURNAL OF CRYSTAL GROWTH, v.272, pp.455 - 459, 2004-12
9	Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM; Sharma, N; Humphreys, C, JOURNAL OF CRYSTAL GROWTH, v.231, no.4, pp.466 - 473, 2001-11
10	Molecular dynamics simulation of energetic ion bombardment onto a-Si(3)N(4) surfaces Kim, DH; Kim, DoHyun; Lee, KS, JOURNAL OF CRYSTAL GROWTH, v.230, no.1-2, pp.285 - 290, 2001-08
11	Properties of reactively sputtered WNx as Cu diffusion barrier Suh, BS; Lee, YJ; Hwang, JS; Park, Chong-Ook, THIN SOLID FILMS, v.348, no.1-2, pp.299 - 303, 1999-07
12	Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.233, no.4, pp.667 - 672, 2001-12
13	Synergy of atom-probe structural data and quantum-mechanical calculations in a theory-guided design of extreme-stiffness superlattices containing metastable phases Friák, M; Tytko, D; Holec, D; Choi, Pyuck-Pa; Eisenlohr, P; Raabe, D; Neugebauer, J, NEW JOURNAL OF PHYSICS, v.17, 2015-09
14	The nature of graphite- and pyridinelike nitrogen configurations in carbon nitride nanotubes: Dependence on diameter and helicity Yang, Seong-Ho; Shin, Weon-Ho; Kang, Jeung-Ku, SMALL, v.4, no.4, pp.437 - 441, 2008-04
15	원료물질에 따른 실리콘 질화막의 원자층 증착 특성 비교 이원준; 이주현; 이연승; 나사균; 박종욱, 한국재료학회지, v.14, no.2, pp.141 - 145, 2004-02

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