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Showing results 1 to 7 of 7

1
Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

Shin, Byungha; Clemens, Jonathon B.; Kelly, Michael A.; Kummel, Andrew C.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.25, 2010-06

2
Chemical effect of dry and wet cleaning of the Ru protective layer of the extreme ultraviolet lithography reflector

Belau, L; Park, JeongYoung; Liang, T; Seo, H; Somorjai, GA, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.27, no.4, pp.1919 - 1925, 2009-07

3
Energy band structure of the single crystalline MgO/n-Ge(001) heterojunction determined by x-ray photoelectron spectroscopy

Jeon, Kun-Rok; Lee, Sang-Jun; Park, Chang-Yup; Lee, Hun-Sung; Shin, Sung-Chul, APPLIED PHYSICS LETTERS, v.97, no.11, 2010-09

4
HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer

Maeng, W. J.; Gu, Gil Ho; Park, C. G.; Lee, Kayoung; Lee, Taeyoon; Kim, Hyungjun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.8, pp.G109 - G113, 2009

5
Improved oxidation resistance of Ru/Si capping layer for extreme ultraviolet lithography reflector

Park, JeongYoung; Belau, L; Seo, H; Somorjai, GA, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.29, no.4, 2011-07

6
Postannealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors

Seo, Seok-Jun; Hwang, Young-Hwan; Bae, Byeong-Soo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.10, pp.357 - 359, 2010

7
The effects of oxygen plasma on the chemical composition and morphology of the Ru capping layer of the extreme ultraviolet mask blanks

Belau, L; Park, JeongYoung; Liang, T; Somorjai, GA, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.26, no.6, pp.2225 - 2229, 2008-11

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