Postannealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors

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We fabricated zinc tin oxide (ZTO) thin film transistors (TFTs) using a stable ZTO sol-gel solution at a low annealing temperature of 300 degrees C. To enhance transistor performance, the ZTO films were postannealed under vacuum and wet air consecutively. The vacuum and wet air postannealed ZTO TFTs exhibited high saturation mobilities (5.5 cm(2)/V s), low subthreshold swing (0.38 V/dec), and high on-off current ratio (8x10(8)). We analyzed the ZTO films before and after postannealing by X-ray photoelectron spectroscopy to explain the origin of the enhanced performance.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
2010
Language
English
Article Type
Article
Keywords

TRANSPARENT; SEMICONDUCTORS; FABRICATION; TFTS

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.10, pp.357 - 359

ISSN
1099-0062
DOI
10.1149/1.3474606
URI
http://hdl.handle.net/10203/96816
Appears in Collection
MS-Journal Papers(저널논문)
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