Browse by Subject SOI MOSFETS

Showing results 1 to 12 of 12

1
A Comprehensive Study of a Single-Transistor Latch in Vertical Pillar-Type FETs With Asymmetric Source and Drain

Lee, Seung-Wook; Kim, Seong-Yeon; Hwang, Kyu-Man; Jin, Ik Kyeong; Hur, Jae; Kim, Dohyun; Son, Jun Woo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.11, pp.5208 - 5212, 2018-11

2
A Full-Range Drain Current Model for Double-Gate Junctionless Transistors

Duarte, Juan Pablo; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.12, pp.4219 - 4225, 2011-12

3
A transistor-based biosensor for the extraction of physical properties from biomolecules

Kim, Sung-Ho; Baek, David; Kim, Jee-Yeon; Choi, Sung-Jin; Seol, Myeong-Lok; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.101, no.7, 2012-08

4
A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part I: Charge Model

Duarte, Juan Pablo; Choi, Sung-Jin; Moon, Dong-Il; Ahn, Jae-Hyuk; Kim, Jee-Yeon; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.2, pp.840 - 847, 2013-02

5
A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part II: Drain Current Model

Duarte, Juan Pablo; Choi, Sung-Jin; Moon, Dong-Il; Ahn, Jae-Hyuk; Kim, Jee-Yeon; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.2, pp.848 - 855, 2013-02

6
Analytical Modeling of a Nanogap-Embedded FET for Application as a Biosensor

Choi, Ji-Min; Han, Jin-Woo; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.12, pp.3477 - 3484, 2010-12

7
Fin-Width Dependence of BJT-Based 1T-DRAM Implemented on FinFET

Moon, Dong-Il; Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.9, pp.909 - 911, 2010-09

8
Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels

Park, Jun-Young; Lee, Byung-Hyun; Chang, Ki Soo; Kim, Dong Uk; Jeong, Chanbae; Kim, Choong-Ki; Bae, Hagyoul; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.11, pp.4393 - 4399, 2017-11

9
Parasitic BJT Read Method for High-Performance Capacitorless 1T-DRAM Mode in Unified RAM

Han, Jin-Woo; Moon, Dong-Il; Kim, Dong-H; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.10, pp.1108 - 1110, 2009-10

10
Plasma doping technology for fabrication of nanoscale metal-oxide-semiconductor devices

Cho, Won-ju; Im, Kiju; Ahn, Chang-Geun; Yang, Jong-Heon; Oh, Jihun; Baek, In-Bok; Lee, Seongjae, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.22, no.6, pp.3210 - 3213, 2004-11

11
SCALING THE SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR INTO THE 0.1-MU-M REGIME USING VERTICAL DOPING ENGINEERING

YAN, RH; OURMAZD, A; LEE, KF; Jeon, DukYoung; PINTO, MR, APPLIED PHYSICS LETTERS, v.59, no.25, pp.3315 - 3317, 1991-12

12
Universal potential model in tied and separated double-gate MOSFETs with consideration of symmetric and asymmetric structure

Han, Jin-Woo; Kim, Chung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.6, pp.1472 - 1479, 2008-06

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