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Showing results 1 to 12 of 12

1
(A) Study on Effects of Thickness and Preferred Orientation on Dielectric Constant of Hf-Aluminate Film Deposited by PEALD = PEALD법으로 증착된 Hf-Aluminate 박막의 두께와 우선배향성이 유전상수에 미치는 영향에 관한 연구link

Moon, Hyoung-Seok; 문형석; et al, 한국과학기술원, 2008

2
(A) study on the $La_2O_3$ and La-Al-O films deposited by plasma-enhanced atomic layer deposition = PEALD 법을 이용한 $La_2O_3$ 및 La-Al-O 박막의 Gate 절연체 특성에 관한 연구link

Kim, Ji-Hye; 김지혜; et al, 한국과학기술원, 2009

3
(A) study on the plasma-enhanced atomic layer deposition of $SrTiO_3$ thin films = PEALD 법으로 증착된 $SrTiO_3$ 박막 증착 및 특성에 관한 연구link

Kim, Ja-Yong; 김자용; et al, 한국과학기술원, 2003

4
(A) study on the plasma-enhanced atomic layer deposition of RuTiN thin films = PEALD 법으로 증착된 RuTiN 박막 증착 및 특성에 관한 연구link

Kwon, Se-Hoon; 권세훈; et al, 한국과학기술원, 2004

5
(A) study on the plasma-enhanced atomic layer deposition of TaN thin films = Peald 법으로 증착된 TaN 박막 특성에 관한 연구link

Chung, Hoi-Sung; 정회성; et al, 한국과학기술원, 2004

6
ALD와 PEALD를 이용한 $Al_2O_3$ 박막 증착에 관한 연구 = A study on the $Al_2O_3$ thin film deposition by ALD and PEALDlink

전우석; Jeon, Woo-Seok; et al, 한국과학기술원, 2003

7
Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving

Im, Youngjun; Cho, Seong-In; Kim, Jingyu; Woo, Namgyu; Ko, Jong Beom; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.44, no.11, pp.1849 - 1852, 2023-11

8
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs

Cho, Seong-In; Woo, Namgyu; Jeong, Hyun-Jun; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.650 - 653, 2023-04

9
Performance and Stability Enhancement of In-Sn-Zn-O TFTs Using SiO2 Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition

Sheng, Jiazhen; Han, Ju-Hwan; Choi, Wan-Ho; Park, Jozeph; Park, Jin-Seong, ACS APPLIED MATERIALS & INTERFACES, v.9, no.49, pp.42928 - 42934, 2017-12

10
Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

Ko, Jong Beom; Yeom, Hye In; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.37, no.1, pp.39 - 42, 2016-01

11
Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator

Cho, Seong-In; Ko, Jong Beom; Lee, Seung Hee; Kim, Junsung; Park, Sang-Hee Ko, JOURNAL OF ALLOYS AND COMPOUNDS, v.893, 2022-02

12
Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications

Jeon, Sanghun; Park, Sungho, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.10, pp.H930 - H933, 2010-08

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