1 | Analysis of High-Efficiency Power Amplifier Using Second Harmonic Manipulation: Inverse Class-F/J Amplifiers Kim, Joon Hyung; Lee, Sung Jun; Park, Bong Hyuk; Jang, Seung Hyun; Jung, Jae Ho; Park, Chul Soon, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.59, no.8, pp.2024 - 2036, 2011-08 |
2 | Development of High-Performance Micro/Millimeter-wave Band PIN-Diode MMICs using a BCB-Based Multi-Layer Technology = BCB 기반 다층구조 제작기술을 이용한 고성능 마이크로/밀리미터파 대역 핀-다이오드 집적회로 개발에 대한 연구link Yang, Jung-Gil; 양정길; et al, 한국과학기술원, 2011 |
3 | Dislocation reduction in GaN epilayers by maskless Pendeo-epitaxy process Park, DJ; Lee, JeongYong; Cho, HK; Hong, CH; Cheong, HS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.1253 - 1256, 2004-11 |
4 | Effect of Si, Mg, and Mg-Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, SOLID-STATE ELECTRONICS, v.45, no.12, pp.2023 - 2027, 2001-12 |
5 | Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods Park, YS; Kang, TW; Im, H; Lee, SK; Cho, YH; Park, CM; Han, MS; et al, JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.4, pp.307 - 311, 2009-12 |
6 | Electrically Driven Quantum Dot/Wire/Well Hybrid Light-Emitting Diodes Ko, Young-Ho; Kim, Je-Hyung; Jin, Li-Hua; Ko, Suck-Min; Kwon, Bong-Joon; Kim, Joo-Sung; Kim, Taek; et al, ADVANCED MATERIALS, v.23, no.45, pp.5364 - 5364, 2011-12 |
7 | Epitaxial growth of GaN on LaAlO3(100) substrate by RF plasma assisted molecular beam epitaxy Lee, JJ; Kang, KY; Park, YS; Yang, CS; Kim, HS; Kim, KH; Kang, TW; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.11, pp.6487 - 6488, 1999-11 |
8 | Fabrication and optical study of ingan-based low dimensional quantum structures grown on GaN pyramids = GaN 피라미드 구조 위에 성장된 InGaN 기반 저차원 양자구조의 제작 및 광학적 특성link Ko, Youngho-Ko; 고영호; et al, 한국과학기술원, 2014 |
9 | First-principles study of the growth mechanism of cubic GaN film, the ferromagnetism of Co-doped ZnO nanowires, and the defect properties of high-k gate oxides = 입방구조 질화갈륨 박막 성장, 산화아연 나노선의 강자성 특성과 고유전체 게이트 산화물의 결함 특성에 대한 제일원리 연구link Choi, Eun-Ae; 최은애; et al, 한국과학기술원, 2010 |
10 | GaN 공정을 이용한 X-Ku Band 저잡음 증폭기 및 X-Band 양방향 증폭기 = X-Ku band LNA and X-Band bidirectional amplifier in GaN MMIC technologylink 김동민; Kim, Dong-Min; et al, 한국과학기술원, 2013 |
11 | GaN의 광학적 특성에 관한 연구 = Study on the optical properties of gallium nitridelink 이철; Lee, Chul; et al, 한국과학기술원, 1999 |
12 | High Efficient Polarization-Matched InGaN/MgZnO Quantum Well Structures Park, Seoung-Hwan; Ahn, Doyeol; Cho, Yong-Hoon, IEEE PHOTONICS TECHNOLOGY LETTERS, v.24, no.6, pp.494 - 496, 2012-03 |
13 | High-Efficiency Envelope-Tracking Transmitter With Optimized Class-F-1 Amplifier and 2-bit Envelope Amplifier for 3G LTE Base Station Kim, Joon Hyung; Do Jo, Gweon; Oh, Jung Hoon; Kim, Young Hoon; Lee, Kwang Chun; Jung, Jae Ho; Park, Chul Soon, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.59, no.6, pp.1610 - 1621, 2011-06 |
14 | High-efficiency Si-gel-encapsulated GaN-based photonic crystal blue light-emitting modes Kim, SK; Cho, HK; Jang, J; Lee, JS; Lee, Yong-Hee, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, pp.1026 - 1030, 2008-04 |
15 | High-Linearity K-Band Absorptive-Type MMIC Switch Using GaN PIN-Diodes Yang, Jung-Gil; Yang, Kyoung-Hoon, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.23, no.1, pp.37 - 39, 2013-01 |
16 | Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region Jung, Byung Oh; Bae, Si-Young; Kim, Sang-Yun; Lee, Seunga; Lee, Jeong Yong; Lee, Dong-Seon; Kato, Yoshihiro; et al, NANO ENERGY, v.11, pp.294 - 303, 2015-01 |
17 | Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Eom, Daeyong; Yoo, Yang-Seok; et al, NANOTECHNOLOGY, v.26, no.33, pp.335601, 2015-08 |
18 | Laser Liftoff GaN Thin-Film Photonic Crystal GaN-Based Light-Emitting Diodes Cho, HK; Kim, SK; Bae, DK; Kang, BC; Lee, JS; Lee, Yong-Hee, IEEE PHOTONICS TECHNOLOGY LETTERS, v.20, pp.2096 - 2098, 2008-11 |
19 | Luminescence properties of InGaN/GaN light-emitting diodes with violet, blue, and green emission Cho, Il-Wook; Lee, Bom; Ryu, Mee-Yi; Lee, Kwanjae; Kim, Jin Soo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.78, no.4, pp.275 - 279, 2021-02 |
20 | MBE growth of wurtzite GaN on LaAlO3 (100) substrate Lee, JJ; Park, YS; Yang, CS; Kim, HS; Kim, KH; Kang, KY; Kang, TW; et al, JOURNAL OF CRYSTAL GROWTH, v.213, no.1-2, pp.33 - 39, 2000-05 |
21 | Micro- and Time-resolved Photoluminescence in GaN Nanorods with Different Diameters Park, YS; Im, H; Yoon, IT; Lee, SK; Cho, Yong-Hoon; Taylor, RA, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, pp.756 - 759, 2010-10 |
22 | Optical properties of thick-film GaN grown by hydride vapor phase epitaxy on MgAl2O4 substrate Kim, ST; Lee, YJ; Moon, DC; Lee, C; Park, Hae-Yong, JOURNAL OF ELECTRONIC MATERIALS, v.27, no.10, pp.1112 - 1116, 1998 |
23 | Plasma-assisted molecular beam epitaxy of In xGa 1-XN films on: C-plane sapphire substrates Shin, EunJung; Seok, LimDong; Lim, SeHwan; Han, SeokKyu; Lee, HyoSung; Hong, SoonKu; Joeng, Myoungho; et al, Korean Journal of Materials Research, v.22, no.4, pp.185 - 189, 2012-04 |
24 | Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate Ahn, Min-joo; Jeong, Woo-seop; Shim, Kyu-yeon; Kang, Seongho; Kim, Hwayoung; Kim, Dae-sik; Jhin, Junggeun; et al, MATERIALS, v.16, no.6, 2023-03 |
25 | Stability of the cubic phase in GaN doped with 3d-transition metal ions Choi, Eun-Ae; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.401, pp.319 - 322, 2007-12 |
26 | Structural characterization of GaN nanorods grown by hydride vapor phase epitaxy = 수소화물기상증착법으로 성장된 GaN 나노막대의 구조 특성 연구link Lee, Kyu-Hyung; 이규형; et al, 한국과학기술원, 2009 |
27 | Structural characterization of Ⅲ-nitride based alloys, heterostructures, and quantum wells = Ⅲ-N 질화물 반도체 이종접합구조와 양자우물구조의 구조적 특성link Cho, Hyung-Koun; 조형균; et al, 한국과학기술원, 2002 |
28 | Synthesis and characterization of single precursors for growth of MN (M = Al, Ga) thin films = MN (M = Al, Ga) 박막의 단일선구물질 합성, 특성화 및 박막 성장에 관한 연구link Kim, Youn-Soo; 김윤수; et al, 한국과학기술원, 1998 |
29 | The genesis and importance of oxide-metal interface controlled heterogeneous catalysis; the catalytic nanodiode Park, JeongYoung; Renzas, JR; Contreras, AM; Somorjai, GA, TOPICS IN CATALYSIS, v.46, no.1-2, pp.217 - 222, 2007-09 |
30 | Transferable, flexible white light-emitting diodes of GaN p-n junction microcrystals fabricated by remote epitaxy Jeong, Junseok; Jin, Dae Kwon; Choi, Joonghoon; Jang, Junho; Kang, Bong Kyun; Wang, Qingxiao; Park, Won Il; et al, NANO ENERGY, v.86, 2021-08 |
31 | Ultrashort carrier lifetime of vapor-liquid-solid-grown GaN/InGaN multi-quantum-well coaxial nanorods Ebaid, Mohamed; Kang, Jin-Ho; Lim, Seunghyuk; Ko, Suck-Min; Cho, Yong-Hoon; Ryu, Sang-Wan, ACTA MATERIALIA, v.65, pp.118 - 124, 2014-02 |
32 | 고전압 동작을 위한 차세대 전력반도체 소자 구조개선 및 최적화 = Structural improvement and optimization of next generation power device for high power operationlink 이강훈; Lee, Kang-Hoon; et al, 한국과학기술원, 2014 |
33 | 고출력 RF 집적회로의 신뢰성 향상을 위한 커패시터 구현 = Implementation of reliable capacitors for miniaturized high power RF applicationslink 김정우; Kim, Jung-Woo; et al, 한국과학기술원, 2011 |
34 | 고출력 RF 집적회로의 신뢰성 향상을 위한 커패시터 구현 = Implementation of reliable capacitors for miniaturized high power RF applicationslink 김정우; Kim, Jung-Woo; et al, 한국과학기술원, 2011 |
35 | 다양한 Gate insulator 를 이용한 고전력 AlGaN/GaN MIS-HEMT 제작 = Fabrication of high-breakdown AlGaN/GaN MIS-HEMTs using various gate insulatorslink 고광의; Ko, Kwang-Ui; et al, 한국과학기술원, 2007 |
36 | 마스크 없는 Pendeo epitaxy 공정에 의한 저결함 GaN 박막의 미세구조 연구 = Microstructural characterization of the low dislocation density GaN films grown by maskless pendeo epitaxylink 박동준; Park, Dong-Jun; et al, 한국과학기술원, 2004 |
37 | 마이크로 스트럭쳐 GaN 기술을 이용한 생체 이식형 flexible LED bio-sensor = Implantable, flexible LED bio-sensor using μs-GaN technologylink 이상용; Lee, Sang-Yong; et al, 한국과학기술원, 2011 |
38 | 마이크로 스트럭쳐 GaN 기술을 이용한 생체 이식형 flexible LED bio-sensor = Implantable, flexible LED bio-sensor using μs-GaN technologylink 이상용; Lee, Sang-Yong; et al, 한국과학기술원, 2011 |
39 | 비대칭 랑게 커플러와 적응형 바이어스 회로를 적용한 GaN MMIC 도허티 전력 증폭기 = GaN MMIC doherty power amplifier with asymmetric lange coupler and adaptive bias circuit.link 이상민; Lee, Sangmin; et al, 한국과학기술원, 2015 |
40 | 사파이어 기판 위에 성장된 GaN 박막의 구조적 특성에 관한 연구 = A study on structural properties of GaN epilayers grown on sapphire substratelink 전희정; Jeon, Hee-Jeong; et al, 한국과학기술원, 2002 |
41 | 선택적 양극산화 알루미늄 기판을 이용한 GaN 고출력 SPDT 스위치의 설계 및 제작 = Design and fabrication of GaN high power SPDT switch using selective anodized aluminum substratelink 안정호; Ahn, Jeong-Ho; et al, 한국과학기술원, 2010 |
42 | 집적화된 집중소자 쿼드러쳐 커플러를 이용한 GaN MMIC 도허티 전력 증폭기 = GaN MMIC doherty power amplifier with integrated lumped element quadrature couplerlink 이재훈; Lee, Jae-Hun; et al, 한국과학기술원, 2013 |