Browse by Subject ELECTRON-TRAPPING CHARACTERIZATION

Showing results 1 to 7 of 7

1
Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method

Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.28, no.17, 2017-04

2
Fast and slow transient charging of Oxide Semiconductor Transistors

Kim, Taeho; Park, Sungho; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-09

3
Fast transient charging behavior of HfInZnO thin-film transistor

Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.107, no.9, 2015-08

4
Impact of fast transient charging and ambient on mobility of WS2 field-effect transistor

Park, Junghak; Woo, Hyunsuk; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.35, no.5, 2017-09

5
Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor

Kim, Taeho; Choi, Rino; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.38, no.2, pp.203 - 206, 2017-02

6
Microsecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor

Woo, Hyunsuk; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-08

7
Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states

Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05

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