Browse by Subject GATE DIELECTRICS
Showing results 20 to 35 of 35
| Microsecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor Woo, Hyunsuk; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-08 |
| Photo-Curable Sol-Gel Hybrid Film as a Dielectric Layer by a Thiol-ene Reaction in Air or N-2 for Organic Thin Film Transistors Kim, Joon-Soo; Lee, Seung-Won; Hwang, Young-Hwan; Kim, Yong-Ho; Yoo, Seung-Hyup; Bae, Byeong-Soo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.5, pp.G13 - G15, 2012-02 |
| Process and material properties of HfLaO(x) prepared by atomic layer deposition He, Wei; Chan, Daniel S. H.; Kim, Sun-Jung; Kim, Young-Sun; Kim, Sung-Tae; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G189 - G193, 2008-08 |
| Profile Evolution for Conformal Atomic Layer Deposition over Nanotopography Cleveland E.R.; Banerjee P.; Perez I.; Lee, Sang Bok; Rubloff G.W., ACS NANO, v.4, no.8, pp.4637 - 4644, 2010 |
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 |
| Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.17, 2018-04 |
| Reliability issues and role of defects in high-k dielectric HfO2 devices Kang, JG; Kim, DY; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.552 - 557, 2007-03 |
| Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High-k Polymer Dielectric for Extremely Stable Organic Thin-Film Transistor Operation Choi, Junhwan; Yoon, Jongsun; Kim, Min Ju; Pak, Kwanyong; Lee, Changhyeon; Lee, Haechang; Jeong, Kihoon; et al, ACS APPLIED MATERIALS & INTERFACES, v.11, no.32, pp.29113 - 29123, 2019-07 |
| Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation Ang, CH; Tan, SS; Lek, CM; Lin, W; Zheng, ZJ; Chen, T; Cho, Byung Jin, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.4, pp.26 - 28, 2002-04 |
| Surface reaction mechanisms for atomic layer deposition of silicon nitride Mui, C; Widjaja, Y; Kang, Jeung Ku; Musgrave, CB, SURFACE SCIENCE, v.557, no.1-3, pp.159 - 170, 2004-05 |
| Switching of Photonic Crystal Lasers by Graphene Hwang, Min-Soo; Kim, Ha-Reem; Kim, Kyoung-Ho; Jeong, Kwang-Yong; Park, Jin-Sung; Choi, Jae-Hyuck; Kang, Ju-Hyung; et al, NANO LETTERS, v.17, no.3, pp.1892 - 1898, 2017-03 |
| Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; et al, NATURE MATERIALS, v.14, no.6, pp.628 - 635, 2015-06 |
| The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5, 2016-05 |
| Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si Yu, HY; Wu, N; Li, MF; Zhu, CX; Cho, Byung Jin; Kwong, DL; Tung, CH; et al, APPLIED PHYSICS LETTERS, v.81, no.19, pp.3618 - 3620, 2002-11 |
| Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors Lee, Sung Won; Shin, Minkwan; Park, Jae Yoon; Kim, Bong Soo; Tu, Deyu; Jeon, Sanghun; Jeong, Unyong, SCIENCE OF ADVANCED MATERIALS, v.7, no.5, pp.874 - 880, 2015-05 |
| Ultrathin ZrOx-Organic Hybrid Dielectric (EOT 3.2 nm) via Initiated Chemical Vapor Deposition for High-Performance Flexible Electronics Kim, Min Ju; Pak, Kwanyong; Choi, Junhwan; Lee, Tae In; Hwang, Wan Sik; Im, Sung Gap; Cho, Byung-Jin, ACS APPLIED MATERIALS & INTERFACES, v.11, no.47, pp.44513 - 44520, 2019-11 |
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