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Showing results 4 to 7 of 7

4
Fabrication of Polycrystalline Si Films by Vapor-Induced Crystallization and Rapid Thermal Annealing Process

Yang, Yong-Ho; Ahn, Kyung-Min; Ahn, Byung-Tae, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.8, pp.92 - 95, 2010

5
HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer

Maeng, W. J.; Gu, Gil Ho; Park, C. G.; Lee, Kayoung; Lee, Taeyoon; Kim, Hyungjun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.8, pp.G109 - G113, 2009

6
High Stability InGaZnO4 Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers

Kim, Dong-Hun; Choi, Seung-Hoon; Cho, Nam-Gyu; Chang, Young-Eun; Kim, Ho-Gi; Hong, Jae-Min; Kim, Il-Doo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.296 - 298, 2009

7
Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices

Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02

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