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Defect-free ultra-shallow source/drain extension using spin-on-dopants for deep submicron SOI MOSFET applications Yang, JH; Oh, Jihun; Cho, WJ; Lee, SJ; Im, KJ; Park, K, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.44, no.2, pp.423 - 426, 2004-02 |
Ultra shallow and abrupt n(+)-p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50 nm Si metal-oxide-semiconductor devices Oh, Jihun; Im, K; Ahn, CG; Yang, JH; Cho, WJ; Lee, S; Park, K, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.110, no.2, pp.185 - 189, 2004-07 |
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