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Showing results 172781 to 172800 of 276281

172781
Schlieren, Shadowgraph, Mie-scattering visualization of diesel and gasoline sprays in high pressure/high temperature chamber under GDCI engine low load condition

Kim, Donghoon; Park, Stephen Sungsan; Bae, Choongsik, INTERNATIONAL JOURNAL OF AUTOMOTIVE TECHNOLOGY, v.19, no.1, pp.1 - 8, 2018-02

172782
Schmitt-Trigger Controller Design of the Lunar Lander by Applying Limit Cycle Analysis

Jo, Byeongun; Ahn, Jaemyung, 군사과학기술학회 종합학술대회, 군사과학기술학회, 2016-06-09

172783
Schnorr Signature Scheme with Restricted Signing Capability

Choi, C; Kim, Z; Kim, Kwangjo, CSS2003, pp.385 - 390, 2003-10

172784
School of Electronic and Electrical Engineering Hongik University, Seoul, Korea

Kim, Dong-Chan; Park, Seong-Jin; Park, Seong-Ook, 2018 International Symposium on Antennas and Propagation, ISAP 2018, Institute of Electrical and Electronics Engineers Inc., 2018-10

172785
Schooling behavior of heaving flexible airfoils

Im, Sunghyuk; Sung, Hyung Jin, 69th Annual Meeting of the APS Division of Fluid Dynamics, APS Division of Fluid Dynamics, 2016-11-21

172786
Schooling behavior of rigid and flexible heaving airfoils

Im, Sunghyuk; Park, Sung Goon; Cho, Yeunwoo; Sung, Hyung Jin, INTERNATIONAL JOURNAL OF HEAT AND FLUID FLOW, v.69, pp.224 - 233, 2018-02

172787
Schooling of Self-Propelled Flexible Fins

Park, Sung Goon; Sung, Hyung Jin, 70th Annual Meeting of the APS Division of Fluid Dynamics, the APS Division of Fluid Dynamics, 2017-11-19

172788
Schottky Anomaly Observed in 31P NMR for 31P-doped Si

이순칠; 정민기; 송명훈, JOURNAL OF ANALYTIC SCIENCE AND TECHNOLOGY, v.1, no.1, pp.19 - 24, 2010-03

172789
Schottky barrier height and effective work function in Ni/oxide interface: a density-functional study

노현균; 오영준; 이태경; 장기주, The 8th KIAS Electronic Structure Calculation Workshop, KIAS, 2012-06

172790
Schottky barrier height at TiN/HfO2 interface and B segregation mechanism at Si/SiO2 interface = TiN/HfO2 계면의 쇼트키 장벽과 Si/SiO2 계면의 붕소 확산 메카니즘 연구link

Oh, Young Jun; 오영준; et al, 한국과학기술원, 2015

172791
Schottky barrier height modulation of metal-interlayer-semiconductor structure depending on contact surface orientation for multi-gate transistors

Kim, Gwang-Sik; Lee, Tae In; Cho, Byung Jin; Yu, Hyun-Yong, APPLIED PHYSICS LETTERS, v.114, no.1, 2019-01

172792
Schottky barrier heights and effective work functions at various TiAlN/HfO2 interface

김근명; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04

172793
Schottky barriers and work functions of Ni/HfO2 and Ni/SiO2 gate stacks

Noh, HK; Oh, Y. J.; Chang, Kee-Joo, The 14th Asian Workshop on First-Principles Electronic Structure Calculations, The University of Tokyo, 2011

172794
Schottky contact-based light detection device and light detection method using same

Yu, Kyoungsik; Jin, Yeong Hoon; Kim, Hyung Suk; Yoo, Seunghyup

172795
Schottky Junction-based Near-Infrared Sub-Bandgap Organic Photodetectors with Coherent Perfect Absorption

Jin, Yeonghoon; Kim, Hyung Suk; Yoo, Seunghyup; Yu, Kyoungsik, CLEO 2020 (Conference on Lasers and Electro-Optics), The Optical Society (OSA), 2020-05-11

172796
Schottky Properties of Ion Beam Deposited W-Si-N Refractory Contacts on GaAs

Lee, Jeong Yong, KITE and IEEE Korea Sec, pp.408 - 408, 1989-10-01

172797
Schottky Tunneling Effects in a Tunnel FET

Hur, Jae; Jeong, Woo Jin; Shin, Mincheol; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.12, pp.5223 - 5229, 2017-12

172798
Schottky-barrier quantum well in two-dimensional semiconductor nanotransistors

Jiang, Jinbao; Doan, Manh-Ha; Sun, Linfeng; Ghimire, Mohan Kumar; Kim, Hyun; Yun, Seok Joon; Yang, Heejun; et al, MATERIALS TODAY PHYSICS, v.15, 2020-12

172799
Schottky-Barrier Si nanowire MOSFET: effects of Source/Drain metals and gate dielectrics

Cho, Byung Jin; Yang, WF; Whang, SJ; Lee, SJ; Zhu, HC; Gu, HL, 2007 MRS Spring Meeting, pp.0 - 0, 2007-04-09

172800
Schrock vs Fischer carbenes: A quantum chemical perspective

Won, Joonghee; Jung, Hoimin; Mane, Manoj V.; Heo, Joon; Kwon, Seongyeon; Baik, Mu-Hyun, ADVANCES IN INORGANIC CHEMISTRY, v.73, pp.385 - 443, 2019-12

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