Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Cited 7 time in webofscience Cited 10 time in scopus
  • Hit : 441
  • Download : 1
Ferroelectric Pb(Zr,Ti)O-3 thin films were successfully fabricated on Pt-coated Si substrates by the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method using metal-organic (MO) sources. Perovskite structures with well-developed crystalline grains are obtained at a substrate temperature of 500 degrees C. These PZT films, with thicknesses of about 1000 Angstrom, show high charge storage densities (P-max-P-r = 10-15 mu C cm(-2) for 1.5 V operation) and low leakage current densities (approximate to 10(-6) A cm(-2) at 1.5 V). The effects of the Zr/Ti concentration ratio in the film and the rapid thermal annealing on the electrical properties of the films were also studied.
Publisher
ELSEVIER SCIENCE SA LAUSANNE
Issue Date
1996-08
Language
English
Article Type
Article
Citation

MATERIALS CHEMISTRY AND PHYSICS, v.45, no.2, pp.155 - 158

ISSN
0254-0584
DOI
10.1016/0254-0584(96)80094-0
URI
http://hdl.handle.net/10203/25293
Appears in Collection
RIMS Journal PapersMS-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 7 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0