Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Abstract

Ferroelectric Pb(Zr,Ti)O-3 thin films were successfully fabricated on Pt-coated Si substrates by the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method using metal-organic (MO) sources. Perovskite structures with well-developed crystalline grains are obtained at a substrate temperature of 500 degrees C. These PZT films, with thicknesses of about 1000 Angstrom, show high charge storage densities (P-max-P-r = 10-15 mu C cm(-2) for 1.5 V operation) and low leakage current densities (approximate to 10(-6) A cm(-2) at 1.5 V). The effects of the Zr/Ti concentration ratio in the film and the rapid thermal annealing on the electrical properties of the films were also studied.