New reliability issues of CMOS transistors with 1.3 nm gate oxideNew reliability issues of CMOS transistors with 1.3 nm gate oxide
- Issue Date
- 2003-04-28
- Language
- ENG
- Citation
7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, pp.0 - 0
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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