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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

New reliability issues of CMOS transistors with 1.3 nm gate oxideNew reliability issues of CMOS transistors with 1.3 nm gate oxide

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorLi, MF-
dc.contributor.authorChen, G-
dc.contributor.authorLoh, WY-
dc.contributor.authorKwong, DL-
dc.date.accessioned2013-03-18T04:46:57Z-
dc.date.available2013-03-18T04:46:57Z-
dc.date.created2012-02-06-
dc.date.issued2003-04-28-
dc.identifier.citation7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/144848-
dc.languageENG-
dc.titleNew reliability issues of CMOS transistors with 1.3 nm gate oxide-
dc.title.alternativeNew reliability issues of CMOS transistors with 1.3 nm gate oxide-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationname7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films-
dc.identifier.conferencecountryFrance-
dc.identifier.conferencecountryFrance-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorLi, MF-
dc.contributor.nonIdAuthorChen, G-
dc.contributor.nonIdAuthorLoh, WY-
dc.contributor.nonIdAuthorKwong, DL-
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EE-Conference Papers(학술회의논문)
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