Role of As Atoms Absorbed on the Uppermose CaF2 Surface in the Electron-Beam exposure and Epitaxy for GaAs/CaF2/Si Structures

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Issue Date
1989
Language
ENG
Citation

Proc. 20th Symp. on lon Implantation and Submicron Fabrication, Saitama Japan, pp.9 - 12

URI
http://hdl.handle.net/10203/111484
Appears in Collection
EE-Conference Papers(학술회의논문)
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