Role of As Atoms Absorbed on the Uppermose CaF2 Surface in the Electron-Beam exposure and Epitaxy for GaAs/CaF2/Si Structures
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Hee Chul | - |
| dc.contributor.author | Ishiwara, H | - |
| dc.contributor.author | Furukawa, S | - |
| dc.date.accessioned | 2013-03-14T17:48:12Z | - |
| dc.date.available | 2013-03-14T17:48:12Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989 | - |
| dc.identifier.citation | Proc. 20th Symp. on lon Implantation and Submicron Fabrication, Saitama Japan, v., no., pp.9 - 12 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/111484 | - |
| dc.language | ENG | - |
| dc.title | Role of As Atoms Absorbed on the Uppermose CaF2 Surface in the Electron-Beam exposure and Epitaxy for GaAs/CaF2/Si Structures | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 9 | - |
| dc.citation.endingpage | 12 | - |
| dc.citation.publicationname | Proc. 20th Symp. on lon Implantation and Submicron Fabrication, Saitama Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.contributor.nonIdAuthor | Ishiwara, H | - |
| dc.contributor.nonIdAuthor | Furukawa, S | - |
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